Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process

The relationship between the purge time and overall growth rate in pulsed injection metal–organic chemical vapor deposition with different V/III ratios is studied by numerical analysis. transport behavior of TMAl TMAlNH3 during process to understand effect adductive reaction. results show that, as ratio increases, there a significant reduction average per cycle, without addition purging H2 pulse III V pulses, due stronger reaction can be reduced inserting pure but decrease longer cycle time. At smaller ratios, decreases increasing times, since gain reducing offset detrimental extending degree higher for larger ratios. When benefit overcomes deficiency time, remarkable enhancement obtained at high pulses. A achieved choosing an appropriate